英语词汇“transistorizes”的意思、用法、释义、翻译、读音、例句、短语、词组-英语词典

是什么意思

装上晶体管( transistorize的第三人称单数 )；

英英释义

transistorize[ tr?n'sist?raiz, -'zis-, trɑ:n- ]

v.equip (an electronic circuit or device) with transistors
同义词：transistorise

学习怎么用

双语例句

A transistorize radio takes no time to warm up.
晶体管收音机不需要预热时间。

权威例句

dalek transistorizes
A Design and Experiment of Speed Controller with PI-Plus Bang-Bang Action for a DC Servomotor with Transistorized PWM Drives
Application of self-assembled InAs nanodots for a HEMT-typememory-effect transistor
Method for increasing capacitance in stacked and trench capacitors
Fabrication and analysis of polymer field‐effect transistors
n -type organic field effect transistors from perylene bisimide block copolymers and homopolymers
The Atomistic Green''s Function Method: An Efficient Simulation Approach for Nanoscale Phonon Transport
Silicides and local interconnections for high-performance VLSI applications
Room-temperature operation of a memory-effect AlGaAs/GaAs heterojunction field-effect transistor with self-assembled InAs nanodots
Modeling of Integrated Circuit Defect Sensitivities

单词	transistorizes
释义	transistorizes 听听怎么读是什么意思 v. 装上晶体管( transistorize的第三人称单数 )；英英释义 transistorize[ tr?n'sist?raiz, -'zis-, trɑ:n- ] v.equip (an electronic circuit or device) with transistors 同义词：transistorise 学习怎么用双语例句 A transistorize radio takes no time to warm up. 晶体管收音机不需要预热时间。权威例句 dalek transistorizes A Design and Experiment of Speed Controller with PI-Plus Bang-Bang Action for a DC Servomotor with Transistorized PWM Drives Application of self-assembled InAs nanodots for a HEMT-typememory-effect transistor Method for increasing capacitance in stacked and trench capacitors Fabrication and analysis of polymer field‐effect transistors n -type organic field effect transistors from perylene bisimide block copolymers and homopolymers The Atomistic Green''s Function Method: An Efficient Simulation Approach for Nanoscale Phonon Transport Silicides and local interconnections for high-performance VLSI applications Room-temperature operation of a memory-effect AlGaAs/GaAs heterojunction field-effect transistor with self-assembled InAs nanodots Modeling of Integrated Circuit Defect Sensitivities
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